[Oral Presentation]High mobility and broad spectral responsivity thin film transistors with ultrathin niobium-doped indium oxide channel layer

High mobility and broad spectral responsivity thin film transistors with ultrathin niobium-doped indium oxide channel layer
ID：200 View Protection：PUBLIC Updated Time：2023-12-14 17:27:34 Hits：1021 Oral Presentation

Start Time：2021-06-29 12:25 （Asia/Shanghai）

Duration：20min

Session：[C] Session C » [C1] Session block C-1

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Abstract
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Keywords
Speaker
亦哲 陈
工程师 中国科学院武汉病毒研究所

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